V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier

Product Categories

Electronic IC Chip [26]
Memory IC Chip [16]
Amplifier IC Chip [19]
PLC Programmable Logic Controller [127]
EMI Filter IC [23]
Display Driver IC [18]
MCU Microcontroller Unit [12]
Power Management ICs [24]
IGBT Power Module [19]
IC Electronic Components [18]
Discrete Semiconductor Devices [23]
Electronic Component Connector [19]
BOM Electronic Components [16]

Guangzhou Topfast Technology Co., Ltd.

Contact Now

V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier

Name: V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier
Brand: Vishay General Semiconductor
Price: 1 USD

Buy cheap V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottky Rectifier product

Brand Name : Vishay General Semiconductor

Model Number : V20PWM45-M3/I V20PWM45HM3/I

MOQ : 1 piece

Payment Terms : T/T

Delivery Time : 2~8 workdays

Brand : Vishay General Semiconductor

Certificate : /

Model : V20PWM45-M3/I V20PWM45HM3/I

MOQ : 1 pc

Price : Negotiated

Delivery : 2~8 workdays

Payment : T/T

Contact Now

Product Description

V20PWM45 Vishay Semiconductor TMBS Trench MOS Barrier Schottk

V20PWM45 V20PWM45C-My Rectifier3/I Vishay Semiconductor High Current Density TMBS Trench MOS Barrier Schottky Rectifier DPAK Discrete Semiconductor Products

V20PWM45 :High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.35 V at IF = 5 A
V20PWM45C High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.39 V at IF = 5 A

APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling diodes, and polarity protection applications

FEATURES
• Very low profile - typical height of 1.3 mm
• Trench MOS Schottky technology
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization

Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features :
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D-Pak IRLR3915PbF I-Pak IRLU3915PbF Lea

Product Technical Specifications

Category	Discrete Semiconductor Products
	Diodes - Rectifiers - Single
Mfr	Vishay General Semiconductor - Diodes Division
Series	Automotive, AEC-Q101, eSMP®, TMBS®
Package	Tape & Reel (TR)
Part Status	Active
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	45 V
Current - Average Rectified (Io)	20A
Voltage - Forward (Vf) (Max) @ If	660 mV @ 20 A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr	700 µA @ 45 V
Capacitance @ Vr, F	3100pF @ 4V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	SlimDPAK
Operating Temperature - Junction	-40°C ~ 175°C
Base Product Number	V20PWM45

Part number	V20PWM45-M3/I V20PWM45HM3/I
Base part number	V20PWM45C-M3/I
EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95

Product Tags: